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The Uncertainty of the Indirect Thermographic Measurement of the Temperature of the Semiconductor Element Cover

The Uncertainty of the Indirect Thermographic Measurement of the Temperature of the Semiconductor Element

Open Access
|May 2026

Figures & Tables

Fig. 1.

Package dimensions of the C2M0280120D transistor: (a) external dimensions and (b) internal dimensions (view after epoxy mold compound removal).

Fig. 2.

The diagram of the measurement circuit. A – the tripod, B – the stepper motor, C – the screw, E – the thermographic camera.

Fig. 3.

C2M0280120D package. Tc – thermographically measured temperature of the epoxy mold compound above the die. Tdie – temperature of the top surface of the die determined based on simulation studies.

Fig. 4.

(a) The obtained model with the applied finite element mesh and the point at which the case temperature was measured, (b) simulation result of the C2M0280120D transistor obtained in SolidWorks, showing the resulting temperature distribution and the point at which the case temperature was measured (Tc value converted to °C).

Fig. 5.

Relationship between ΔT and the angle α.

Fig. 6.

Relationship between ΔT and the distance d.

Example uncertainty budget for an indirect thermographic measurement die with Tc=90 °C_

Symbol xiUnitEstimate of quantity xiStandard uncertainty u(xi)Distribution of probabilitySensitivity coefficient cContribution of uncertainty ui(y)
τa-0.99870.0010normal0.44880.0004
WtotW/m20.15540.0066rectangular67.77010.4472
ɛ-0.970.0086rectangular−7.6450−0.0657
Trefl°C302.8868rectangular0.01190.0344
τlm0.950.0289rectangular−10.31890.2982
Ta°C26.54.9000rectangular−0.0151−0.0740
Tl°C26.54.9000rectangular−0.0151−0.0740
Tus°C3.251.88normal11.63
Tc°C90 3.25

Type B uncertainty values for different temperatures Tc ranging from 30 °C to 120 °C_

No.Tc [°C]u(Tc) [°C]
1301.63
2602.44
3903.25
41054.21
51205.17

Standard uncertainty for the quantity Tc (package temperature)_

The value of the standard uncertaintyu(Tc) [°C]
Law of propagation of uncertainty1.63
Monte Carlo method1.68

The materials used in the developed model, along with their corresponding thermal conductivity coefficients k [13], [14], [15]_

Internal structure componentMaterialk [W/m·K]
Black part of the caseEME 5900.25
Back part of the caseCopper400
Semiconductor elementSilicon carbide150
Lead, Internal connectionsCopper400
GreaseMelamine resin0.20

Mesh element size and the corresponding duration of the simulation_

No.Mesh element edge length [mm]Simulation time [s]ΔTcs [s]
12.050.4
21.5100.2
31.0200.1
40.52110.1
50.214550.1

Expanded uncertainty for the quantity Tdie (die)_

No.Tdie [°C]U(Tdie) [°C]
1305.40
2904.78
31206.50
Language: English
Page range: 153 - 160
Submitted on: Nov 6, 2025
Accepted on: Apr 13, 2026
Published on: May 20, 2026
In partnership with: Paradigm Publishing Services
Publication frequency: Volume open

© 2026 Krzysztof Dziarski, Arkadiusz Hulewicz, Przemysław Otomański, published by Slovak Academy of Sciences, Institute of Measurement Science
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.