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Scanning capacitance microscopy characterization of AIIIBV epitaxial layers Cover

Scanning capacitance microscopy characterization of AIIIBV epitaxial layers

Materials Science-Poland
Volume 34 (2016): Issue 4 (December 2016)
By: Adam Szyszka,  Michał Obłąk,  Tomasz Szymański,  Mateusz Wośko,  Wojciech Dawidowski and  Regina Paszkiewicz  
Open Access
|Jan 2017

Figures & Tables

Schematic cross section of the test GaAs multilayer sample.
E-CV (a) and SCM (b) profile of the GaAs test sample.
Calibration curves of SCM measurement.
Schematic cross section of InGaAs tunnel junction sample.
E-CV (a) and SCM (b) profiles of InGaAs tunnel junction sample.
Schematic cross-section of AlGaN/GaN/Si heterostructure.
Topography profile (blue) and SCM signal scan (red) of AlGaN/GaN/Si heterostructure.
DOI: https://doi.org/10.1515/msp-2016-0104 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
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Language: English
Page range: 845 - 850
Submitted on: Apr 19, 2016
|
Accepted on: Sep 7, 2016
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Published on: Jan 4, 2017
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
scanning capacitance microscopy (SCM),
atomic force microscopy (AFM),
GaAs,
InGaAs,
AlGaN/GaN
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2017 Adam Szyszka, Michał Obłąk, Tomasz Szymański, Mateusz Wośko, Wojciech Dawidowski, Regina Paszkiewicz, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

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