Scanning capacitance microscopy characterization of AIIIBV epitaxial layers

Adam Szyszka; Michał Obłąk; Tomasz Szymański; Mateusz Wośko; Wojciech Dawidowski; Regina Paszkiewicz

doi:10.1515/msp-2016-0104

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Scanning capacitance microscopy characterization of AIIIBV epitaxial layers

Materials Science-Poland

Volume 34 (2016): Issue 4 (December 2016)

By: Adam Szyszka, Michał Obłąk, Tomasz Szymański, Mateusz Wośko, Wojciech Dawidowski and Regina Paszkiewicz

Open Access

|Jan 2017

Figures & Tables

Schematic cross section of the test GaAs multilayer sample.

E-CV (a) and SCM (b) profile of the GaAs test sample.

Schematic cross section of InGaAs tunnel junction sample.

E-CV (a) and SCM (b) profiles of InGaAs tunnel junction sample.

Schematic cross-section of AlGaN/GaN/Si heterostructure.

Topography profile (blue) and SCM signal scan (red) of AlGaN/GaN/Si heterostructure.

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DOI: https://doi.org/10.1515/msp-2016-0104 | Journal eISSN: 2083-134X (formerly 2083-124X) | Journal ISSN: 2083-1331

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Language: English

Page range: 845 - 850

Submitted on: Apr 19, 2016

Accepted on: Sep 7, 2016

Published on: Jan 4, 2017

Published by: Wroclaw University of Science and Technology

In partnership with: Paradigm Publishing Services

Keywords:

scanning capacitance microscopy (SCM),

atomic force microscopy (AFM),

GaAs,

InGaAs,

AlGaN/GaN

Related subjects:

Materials sciences,

Materials sciences, other,

Nanomaterials,

Functional and smart materials,

Materials characterization and properties

© 2017 Adam Szyszka, Michał Obłąk, Tomasz Szymański, Mateusz Wośko, Wojciech Dawidowski, Regina Paszkiewicz, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Volume 34 (2016): Issue 4 (December 2016)