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Scanning capacitance microscopy characterization of AIIIBV epitaxial layers Cover

Scanning capacitance microscopy characterization of AIIIBV epitaxial layers

Materials Science-Poland
Volume 34 (2016): Issue 4 (December 2016)
By: Adam Szyszka,  Michał Obłąk,  Tomasz Szymański,  Mateusz Wośko,  Wojciech Dawidowski and  Regina Paszkiewicz  
Open Access
|Jan 2017

Figures & Tables

Schematic cross section of the test GaAs multilayer sample.
Schematic cross section of the test GaAs multilayer sample.
E-CV (a) and SCM (b) profile of the GaAs test sample.
E-CV (a) and SCM (b) profile of the GaAs test sample.
Calibration curves of SCM measurement.
Calibration curves of SCM measurement.
Schematic cross section of InGaAs tunnel junction sample.
Schematic cross section of InGaAs tunnel junction sample.
E-CV (a) and SCM (b) profiles of InGaAs tunnel junction sample.
E-CV (a) and SCM (b) profiles of InGaAs tunnel junction sample.
Schematic cross-section of AlGaN/GaN/Si heterostructure.
Schematic cross-section of AlGaN/GaN/Si heterostructure.
Topography profile (blue) and SCM signal scan (red) of AlGaN/GaN/Si heterostructure.
Topography profile (blue) and SCM signal scan (red) of AlGaN/GaN/Si heterostructure.
DOI: https://doi.org/10.1515/msp-2016-0104 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
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Language: English
Page range: 845 - 850
Submitted on: Apr 19, 2016
|
Accepted on: Sep 7, 2016
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Published on: Jan 4, 2017
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
scanning capacitance microscopy (SCM),
atomic force microscopy (AFM),
GaAs,
InGaAs,
AlGaN/GaN
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2017 Adam Szyszka, Michał Obłąk, Tomasz Szymański, Mateusz Wośko, Wojciech Dawidowski, Regina Paszkiewicz, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

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