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Scanning capacitance microscopy characterization of AIIIBV epitaxial layers Cover

Scanning capacitance microscopy characterization of AIIIBV epitaxial layers

Materials Science-Poland
Volume 34 (2016): Issue 4 (December 2016)
By: Adam Szyszka,  Michał Obłąk,  Tomasz Szymański,  Mateusz Wośko,  Wojciech Dawidowski and  Regina Paszkiewicz  
Open Access
|Jan 2017

Authors

Adam Szyszka

adam.szyszka@pwr.edu.pl

Poland

Michał Obłąk

Poland

Tomasz Szymański

Poland

Mateusz Wośko

Poland

Wojciech Dawidowski

Poland

Regina Paszkiewicz

Poland
DOI: https://doi.org/10.1515/msp-2016-0104 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
Journal RSS Feed
Language: English
Page range: 845 - 850
Submitted on: Apr 19, 2016
|
Accepted on: Sep 7, 2016
|
Published on: Jan 4, 2017
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
scanning capacitance microscopy (SCM),
atomic force microscopy (AFM),
GaAs,
InGaAs,
AlGaN/GaN
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2017 Adam Szyszka, Michał Obłąk, Tomasz Szymański, Mateusz Wośko, Wojciech Dawidowski, Regina Paszkiewicz, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

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