Scanning capacitance microscopy characterization of AIIIBV epitaxial layers

Szyszka, Adam; Obłąk, Michał; Szymański, Tomasz; Wośko, Mateusz; Dawidowski, Wojciech; Paszkiewicz, Regina

doi:10.1515/msp-2016-0104

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Scanning capacitance microscopy characterization of AIIIBV epitaxial layers

Materials Science-Poland

Volume 34 (2016): Issue 4 (December 2016)

By: Adam Szyszka, Michał Obłąk, Tomasz Szymański, Mateusz Wośko, Wojciech Dawidowski and Regina Paszkiewicz

Open Access

|Jan 2017

Abstract

The applicability of scanning capacitance microscopy (SCM) technique for chosen electrical properties characterization of AIIIBV structures fabricated by Metalorganic Vapor Phase Epitaxy (MOVPE) was examined. The calibration curves for quantitative characterization of doping levels in GaAs layers were created. The AlGaN/GaN/Si heterostructures for high electron mobility transistor fabrication and InGaAs tunnel junction for tandem solar cell characterization were presented. The crucial factors of measurement conditions which could influence the obtained results were also discussed.

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DOI: https://doi.org/10.1515/msp-2016-0104 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331

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Language: English

Page range: 845 - 850

Submitted on: Apr 19, 2016

Accepted on: Sep 7, 2016

Published on: Jan 4, 2017

Published by: Wroclaw University of Science and Technology

In partnership with: Paradigm Publishing Services

Publication frequency: 4 issues per year

Keywords:

scanning capacitance microscopy (SCM),

atomic force microscopy (AFM),

GaAs,

InGaAs,

AlGaN/GaN

Related subjects:

Materials sciences,

Materials sciences, other,

Nanomaterials,

Functional and smart materials,

Materials characterization and properties

© 2017 Adam Szyszka, Michał Obłąk, Tomasz Szymański, Mateusz Wośko, Wojciech Dawidowski, Regina Paszkiewicz, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

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