Have a personal or library account? Click to login
Fabrication and characterization of Si/SiO2/TiO2/ZnO heterostructures from sputtered and oxidized Ti-film Cover

Fabrication and characterization of Si/SiO2/TiO2/ZnO heterostructures from sputtered and oxidized Ti-film

Open Access
|Dec 2017

Abstract

The present work reports the fabrication of p-Si/SiO2 /TiO2 and p-Si/SiO2 /TiO2 /ZnO heterostructures deposited by RF sputtering on p-Si substrate. The structural properties of the heterostructures were characterized by X-ray reflectivity and SIMS depth profiling. The electrical and optical properties of the heterostructures were investigated by I − V, C-V measurements and VIS spectroscopy, respectively. The measurements reveal that I − V characteristics in dark show semiconductor-insulator-semiconductor (SIS) structure properties. The I − V characteristics under illumination exhibit changes with significant increase of photocurrent due to photoassisted tunnelling and injection through SiO2 /TiO2 interlayer.

DOI: https://doi.org/10.1515/jee-2017-0057 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632
Language: English
Page range: 58 - 61
Submitted on: Apr 23, 2017
|
Published on: Dec 29, 2017
In partnership with: Paradigm Publishing Services
Publication frequency: 6 issues per year

© 2017 Jaroslav Kováč, Martin Florovič, Andrej Vincze, Edmund Dobročka, Ivan Novotný, Miroslav Mikolášek, Jaroslava Škriniarová, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.