Morphology and FT IR spectra of porous silicon

Martin Kopani; Milan Mikula; Daniel Kosnac; Jan Gregus; Emil Pincik

doi:10.1515/jee-2017-0056

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Morphology and FT IR spectra of porous silicon

Journal of Electrical Engineering

Volume 68 (2017): Issue 7 (December 2017)

By: Martin Kopani, Milan Mikula, Daniel Kosnac, Jan Gregus and Emil Pincik

Open Access

|Dec 2017

Abstract

The morphology and chemical bods of p-type and n-type porous Si was compared. The surface of n-type sample is smooth, homogenous without any features. The surface of p-type sample reveals micrometer-sized islands. FTIR investigation reveals various distribution of SiO_xH_y complexes in both p-and n-type samples. From the conditions leading to porous silicon layer formation (the presence of holes) we suggest both SiO_xH_y and SiF_xH_y complexes in the layer.

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DOI: https://doi.org/10.1515/jee-2017-0056 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632

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Language: English

Page range: 53 - 57

Submitted on: Apr 23, 2017

Published on: Dec 29, 2017

Published by: Slovak University of Technology in Bratislava

In partnership with: Paradigm Publishing Services

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© 2017 Martin Kopani, Milan Mikula, Daniel Kosnac, Jan Gregus, Emil Pincik, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Volume 68 (2017): Issue 7 (December 2017)