Fabrication and characterization of Si/SiO2/TiO2/ZnO heterostructures from sputtered and oxidized Ti-film

Jaroslav Kováč; Martin Florovič; Andrej Vincze; Edmund Dobročka; Ivan Novotný; Miroslav Mikolášek; Jaroslava Škriniarová

doi:10.1515/jee-2017-0057

.blurhash-client-img { display: none !important; }

Fabrication and characterization of Si/SiO2/TiO2/ZnO heterostructures from sputtered and oxidized Ti-film

Journal of Electrical Engineering

Volume 68 (2017): Issue 7 (December 2017)

By: Jaroslav Kováč, Martin Florovič, Andrej Vincze, Edmund Dobročka, Ivan Novotný, Miroslav Mikolášek and Jaroslava Škriniarová

Open Access

|Dec 2017

Abstract

The present work reports the fabrication of p-Si/SiO₂ /TiO₂ and p-Si/SiO₂ /TiO₂ /ZnO heterostructures deposited by RF sputtering on p-Si substrate. The structural properties of the heterostructures were characterized by X-ray reflectivity and SIMS depth profiling. The electrical and optical properties of the heterostructures were investigated by I − V, C-V measurements and VIS spectroscopy, respectively. The measurements reveal that I − V characteristics in dark show semiconductor-insulator-semiconductor (SIS) structure properties. The I − V characteristics under illumination exhibit changes with significant increase of photocurrent due to photoassisted tunnelling and injection through SiO₂ /TiO₂ interlayer.

References

[1] L. Tao, et al “An interface engineered multicolor photodetector based on n-Si(111)/TiO₂ nanorod array heterojunction”, Adv. Funct. Mater., vol. 26 (2016), pp. 1400-1410.
Search in Google Scholar Back to article
[2] S. Avasthi, et al “Hole-blocking titanium-oxide /silicon hetero-junction and its application to photovoltaics”, Appl. Phys. Lett., vol. 102 (2013), pp. 203901.10.1063/1.4803446
Open DOI Search in Google Scholar Back to article
[3] B. Zhou, et al “Preparation and characterization of TiO₂ thin film by thermal oxidation of sputtered Ti film”, Materials Science Semiconductor Processing, vol. 16 (2013), pp. 513-519.
Search in Google Scholar Back to article
[4] H.-L. Lu, et al “Improved photoelectrical properties of n-ZnO/p-Si heterojunction by inserting an optimized thin Al₂O₃ buffer layer”, Optics Express, vol. 22, no. 18 (2014), pp. 22184-221899.10.1364/OE.22.02218425321593
Open DOI Search in Google Scholar Back to article
[5] M. Fujishima, et al “Evaluation of ZnO films by I − V characteristics of SIS structures”, Journal Electrochemical Society, 158 (12), (2011), pp. H1305-H1310.
Search in Google Scholar Back to article
[6] H. Bo, et al “Structural electrical and optical properties of AZO/SiO₂ /p-Si SIS heterojunction prepared by magnetron sputtering”, Optica Applicata, vol. XL, no. 1, (2010), pp. 15-24.
Search in Google Scholar Back to article
[7] M. Perego, et al “Energy band alignment at TiO₂ /Si interface with various interlayers”, Journal of Aplied Physics, vol. 103 (2008), pp. 043509.
Search in Google Scholar Back to article
[8] A.-E. Saatci, et al “Conduction mechanism analysis of inversion current MOS tunnel diodes”, Materials Sciences and Applications, vol. 4 (2013), pp. 794-801.
Search in Google Scholar Back to article

Articles in this issue

DOI: https://doi.org/10.1515/jee-2017-0057 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632

Journal RSS Feed

Language: English

Page range: 58 - 61

Submitted on: Apr 23, 2017

Published on: Dec 29, 2017

Published by: Slovak University of Technology in Bratislava

In partnership with: Paradigm Publishing Services

Publication frequency: 6 issues per year

Keywords:

SIS heterostructures,

thin films,

Ga-doped ZnO,

TiO,

Si,

SIMS,

characteristics,

spectroscopy

Related subjects:

Engineering,

Introductions and overviews,

Engineering, other

© 2017 Jaroslav Kováč, Martin Florovič, Andrej Vincze, Edmund Dobročka, Ivan Novotný, Miroslav Mikolášek, Jaroslava Škriniarová, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Volume 68 (2017): Issue 7 (December 2017)