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Coupled Defect Level Recombination in the P—N Junction Cover

Coupled Defect Level Recombination in the P—N Junction

Journal of Electrical Engineering
Volume 62 (2011): Issue 6 (November 2011)
By: Juraj Racko,  Miroslav Mikolášek,  Peter Benko,  Ondrej Gallo,  Ladislav Harmatha,  Ralf Granzner and  Frank Schwierz  
Open Access
|Dec 2011

References

  1. ISE Integrated System Engineering, Release 7.0, Volume 4a (1995), p. 12 215.
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  2. SCHENK, A.—KRUMBEIN, U.: Coupled Defect Recombination: Theory and Application to Anomalous Diode Characteristics, J. Appl. Phys. 78 (1995), 3185.10.1063/1.360007
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  3. RACKO, J.: Unpublished results.
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DOI: https://doi.org/10.2478/v10187-011-0056-5 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632
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Language: English
Page range: 355 - 358
Published on: Dec 21, 2011
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
Publication frequency: 6 issues per year
Keywords:
tunneling,
coupled levels
Related subjects:
Engineering,
Introductions and overviews,
Engineering, other

© 2011 Juraj Racko, Miroslav Mikolášek, Peter Benko, Ondrej Gallo, Ladislav Harmatha, Ralf Granzner, Frank Schwierz, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons License.

Volume 62 (2011): Issue 6 (November 2011)