Abstract
The well known Shockley-Read-Hall (SRH) model considers emission and capture processes at defects exhibiting a single level or multiple non-coupled levels in the band gap of the semiconductor. The present paper generalizes the model to the case of two mutually coupled defect levels acting as trapping centres. If the intercenter transition is not considered, the model reduces to the case of two non-coupled levels treated by the SRH model.