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Numerical Simulation of Charge Transfer in Shocked Silicon at low Pressure Cover

Numerical Simulation of Charge Transfer in Shocked Silicon at low Pressure

Latvian Journal of Physics and Technical Sciences
Volume 45 (2008): Issue 4 (August 2008)
By: B. Martuzans and  Yu. Skryl  
Open Access
|Sep 2008

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DOI: https://doi.org/10.2478/v10047-008-0018-2 | Journal eISSN: 2255-8896 | Journal ISSN: 0868-8257
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Language: English
Page range: 33 - 46
Published on: Sep 23, 2008
Published by: Institute of Physical Energetics
In partnership with: Paradigm Publishing Services
Publication frequency: 6 issues per year
Related subjects:
Physics,
Technical and applied physics

© 2008 B. Martuzans, Yu. Skryl, published by Institute of Physical Energetics
This work is licensed under the Creative Commons License.

Volume 45 (2008): Issue 4 (August 2008)