Abstract
A numerical method for simulation of electron and hole diffusion in silicon in the temperature gradient created by the shock load is developed. To analyze the transfer process, a complete system of electro-thermo-diffusion equations for charge carriers was solved based on the Poisson equation. The numerical solution was obtained using the difference methods developed for semiconductor devices. The comparison of the experimental results with the numerical calculation shows a good correlation, which means that the thermo-diffusion of charge carriers in the shock wave front is the main factor responsible for polarization in the shocked silicon.