Numerical Simulation of Charge Transfer in Shocked Silicon at low Pressure
By: B. Martuzans and Yu. Skryl
Open Access
|Sep 2008References
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DOI: https://doi.org/10.2478/v10047-008-0018-2 | Journal eISSN: 2255-8896 (formerly 0868-8257) | Journal ISSN: 0868-8257
Language: English
Page range: 33 - 46
Published on: Sep 23, 2008
Published by: Institute of Physical Energetics
In partnership with: Paradigm Publishing Services
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© 2008 B. Martuzans, Yu. Skryl, published by Institute of Physical Energetics
This work is licensed under the Creative Commons License.