Evaluation of AlGaN/GaN heterostructures properties by QMSA and AFM techniques
Abstract
Atomic force microscopy and Quantitative Mobility Spectrum Analysis (QMSA) were applied for characterization and evaluation of the quality of AlGaN/GaN heterostructures. The structural uniformity, growth mode and electrical properties of the heterostructures were determined. The obtained results indicated that the time of growth of the low temperature GaN nucleation layer influenced the morphology and electrical properties of the AlGaN/GaN heterostructure.
Language: English
Page range: 543 - 547
Published on: Dec 15, 2013
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
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© 2013 Adam Szyszka, Mateusz Wośko, Bogdan Paszkiewicz, Marek Tłaczała, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.