Evaluation of AlGaN/GaN heterostructures properties by QMSA and AFM techniques

Szyszka, Adam; Wośko, Mateusz; Paszkiewicz, Bogdan; Tłaczała, Marek

doi:10.2478/s13536-013-0135-3

Abstract

Atomic force microscopy and Quantitative Mobility Spectrum Analysis (QMSA) were applied for characterization and evaluation of the quality of AlGaN/GaN heterostructures. The structural uniformity, growth mode and electrical properties of the heterostructures were determined. The obtained results indicated that the time of growth of the low temperature GaN nucleation layer influenced the morphology and electrical properties of the AlGaN/GaN heterostructure.

References

[1] Beck W. A., Anderson J. R., J. Appl. Phys. 62 (1987), 541. http://dx.doi.org/10.1063/1.33978010.1063/1.339780
Search in Google Scholar
[2] Meyer J. R., Hoffman C. A., Antoszewski J., Faraone L., J. Appl. Phys. 81 (1997), 709. http://dx.doi.org/10.1063/1.36421110.1063/1.364211
Search in Google Scholar
[3] Antoszewski J., Dell J. M., L. Faraone, Tan L. S., Raman A., Chua S. J, Holmes D. S., Lindemuth J. R., Meyer J. R., Mat. Sci. and Eng. B 44 (1997), 65. http://dx.doi.org/10.1016/S0921-5107(96)01808-910.1016/S0921-5107(96)01808-9
Search in Google Scholar
[4] Antoszewski J., Seymour D. J., Faraone L., Meyer J. R., Hoffman C. A., J. Electron. Mater. 24 (1995), 1255. http://dx.doi.org/10.1007/BF0265308210.1007/BF02653082
Search in Google Scholar
[5] Lisesivdin S. B., Yildiz A., Acar S., Kasap M., Ozcelik S., Ozbay E., Appl. Phys. Lett. 91 (2007), 102113. http://dx.doi.org/10.1063/1.277845310.1063/1.2778453
Search in Google Scholar
[6] Meyer J. R., Hoffman C. A., Antoszewski J., Faraone L., J. Appl. Phys. 81 (1997), 709. http://dx.doi.org/10.1063/1.36421110.1063/1.364211
Search in Google Scholar
[7] Lin Y., Arehart A. R., Carlin A. M., Ringelb S. A., Appl. Phys. Lett. 93 (2008), 062109. http://dx.doi.org/10.1063/1.297004510.1063/1.2970045
Search in Google Scholar
[8] Lisesivdin S. B., Altuntas H., Yildiz A., Kasap M., Ozbay E., Ozcelik S., Superlattices and Microstructures 45 (2009), 604. http://dx.doi.org/10.1016/j.spmi.2009.02.00910.1016/j.spmi.2009.02.009
Search in Google Scholar
[9] Wei W., Solid State Sciences 12 (2010), 789. http://dx.doi.org/10.1016/j.solidstatesciences.2010.02.01810.1016/j.solidstatesciences.2010.02.018
Search in Google Scholar
[10] Stephenson G. B., Eastman J. A., Thompson C., Auciello O., Thompson L. J., Munkholm A., Fini P., Denbaars S. P., Speck J. S., Appl. Phys. Lett. 74 (1999), 3326. http://dx.doi.org/10.1063/1.12333310.1063/1.123333
Search in Google Scholar
[11] Lisesivdin S. B., Acar S., Kasap M., Ozcelik S., Gokden S., Ozbay E., Semicond. Sci. Technol. 22 (2007), 543. http://dx.doi.org/10.1088/0268-1242/22/5/01510.1088/0268-1242/22/5/015
Search in Google Scholar
[12] Lorenz K., Gonsalves M., Wook K., Narayanan V., Mahajan S., Appl. Phys. Lett. 77 (2000), 3391. http://dx.doi.org/10.1063/1.132809110.1063/1.1328091
Search in Google Scholar
[13] Wickenden A. E., Koleske D. D., Henry R. L., Twigg M. E., Fatemi M., J. Crysc. Growth 260 (2004), 54. http://dx.doi.org/10.1016/j.jcrysgro.2003.08.02410.1016/j.jcrysgro.2003.08.024
Search in Google Scholar
[14] Smorchkova I. P., Elsass C. R., Ibbetson J. P., Vetury R., Heying B., Fini P., Haus E., Denbaars S.P., Speck J. S., Mishra U. K., J. Appl. Phys. 86 (1999), 4520. http://dx.doi.org/10.1063/1.37139610.1063/1.371396
Search in Google Scholar
[15] Nhat Luang D., Huyen Tung N., Thanh Tien N., J. Appl. Phys. 109, (2011), 113711. http://dx.doi.org/10.1063/1.359218710.1063/1.3592187
Search in Google Scholar
[16] Carosella F., Farvacque J. L., J. Phys.: Condens. Matter 20 (2008), 325210. 10.1088/0953-8984/20/32/325210
Search in Google Scholar

Evaluation of AlGaN/GaN heterostructures properties by QMSA and AFM techniques

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