Have a personal or library account? Click to login
Analysis of MIS equivalent electrical circuit of Au/Pd/Ti-SiO2-GaAs structure based on DLTS measurements Cover

Analysis of MIS equivalent electrical circuit of Au/Pd/Ti-SiO2-GaAs structure based on DLTS measurements

Materials Science-Poland
Volume 31 (2013): Issue 3 (August 2013)
By: S. Kochowski,  Ł. Drewniak,  K. Nitsch,  R. Paszkiewicz and  B. Paszkiewicz  
Open Access
|Aug 2013

References

  1. [1] Cheng C. W., Apostolopoulos G., Fitzgerald E. A., J. Appl. Phys., 109 (2011), 023714. http://dx.doi.org/10.1063/1.353791510.1063/1.3537915
    Search in Google Scholar
  2. [2] Engel-herbert R., Hwang Y., Stemmer S., J. Appl. Phys., 108 (2010), 124101. http://dx.doi.org/10.1063/1.352043110.1063/1.3520431
    Search in Google Scholar
  3. [3] Hasegawa H., Akazawa M., Domanowska A., Adamowicz B., Appl. Surf. Sci., 25 (2010), 5698. http://dx.doi.org/10.1016/j.apsusc.2010.03.09110.1016/j.apsusc.2010.03.091
    Search in Google Scholar
  4. [4] Martens K., Wang W., de Keersmaecker K., Borghs G., Groeseneken G., Maes H., Micr. Eng., 84 (2007), 2146. http://dx.doi.org/10.1016/j.mee.2007.04.03910.1016/j.mee.2007.04.039
    Search in Google Scholar
  5. [5] Martens K. et al., Solid-State Electronics, 51 (2007), 1101. http://dx.doi.org/10.1016/j.sse.2007.06.00210.1016/j.sse.2007.06.002
    Search in Google Scholar
  6. [6] Brammertz G. et al., J. Electrochem. Soc., 155 (2008), 12945. http://dx.doi.org/10.1149/1.298804510.1149/1.2988045
    Search in Google Scholar
  7. [7] Brammertz G. et al., Appl. Phys. Lett., 91 (2007), 133510. http://dx.doi.org/10.1063/1.279078710.1063/1.2790787
    Search in Google Scholar
  8. [8] Hinkle C. L., Sonnet A. Vogel M., M., Appl. Phys. Lett., 91 (2007), 163512. http://dx.doi.org/10.1063/1.280151210.1063/1.2801512
    Search in Google Scholar
  9. [9] Yang T. et al., Appl. Phys. Lett., 91 (2007), 142122. http://dx.doi.org/10.1063/1.279849910.1063/1.2798499
    Search in Google Scholar
  10. [10] Hinkle C. L. et al., Appl. Phys. Lett., 93 (2008), 113506. http://dx.doi.org/10.1063/1.298742810.1063/1.2987428
    Search in Google Scholar
  11. [11] Brammertz G. et al., Appl. Phys. Lett., 93 (2008), 183504. http://dx.doi.org/10.1063/1.300517210.1063/1.3005172
    Search in Google Scholar
  12. [12] Dalapati G. K., Tong Y., Loh W-Y., Mun H. K., Cho M. J., Member S., IEEE Trans. Electron Devices, 54 (2007), 9383. http://dx.doi.org/10.1109/TED.2007.90126110.1109/TED.2007.901261
    Search in Google Scholar
  13. [13] Zheng J. F., Tsai W., Li W. P., Wang X. W., Ma T. P., Appl. Phys. Lett., 92 (2008), 232904. http://dx.doi.org/10.1063/1.294314810.1063/1.2943148
    Search in Google Scholar
  14. [14] Nicollian E. H., Brews J. R., MOS (Metal-Oxide-Semiconductor) Physics and Technology, Wiley, New Jersey, 2003.
    Search in Google Scholar
  15. [15] Macdonald J. R., Impedance Spectroscopy, John Wiley and Sons, 1987
    Search in Google Scholar
  16. [16] Nitsch K., Impedance Spectroscopy in the Investigation of Electronic Materials, Publishing House of Wroclaw Technical University, WrocŁaw, 1999, in Polish.
    Search in Google Scholar
  17. [17] Kochowski S., Nitsch K., Thin Solid Films, 415 (2002), 133. http://dx.doi.org/10.1016/S0040-6090(02)00506-010.1016/S0040-6090(02)00506-0
    Search in Google Scholar
  18. [18] Lang D. V., J. Appl. Phys., 45 (1974), 3023. http://dx.doi.org/10.1063/1.166371910.1063/1.1663719
    Search in Google Scholar
  19. [19] Wang K. L., Evwaraye A. O., J. Appl. Phys., 47 (1976), 4574. http://dx.doi.org/10.1063/1.32238110.1063/1.322381
    Search in Google Scholar
  20. [20] Schulz M., Johnson N. M., Appl. Phys. Lett., 31 (1977), 622. http://dx.doi.org/10.1063/1.8977410.1063/1.89774
    Search in Google Scholar
  21. [21] Gong C., Simoen E., Posthuma N., van Kerschaver E., Poortmans J., Mertens R., Appl. Phys. Lett., 96 (2010), 103507. http://dx.doi.org/10.1063/1.335814010.1063/1.3358140
    Search in Google Scholar
  22. [22] Nakano Y., Jimbo T., Phys. Stat. Sol. (b), 234 (2002), 859. http://dx.doi.org/10.1002/1521-3951(200212)234:3<;859::AID-PSSB859>3.0.CO;2-H10.1002/1521-3951(200212)234:3<;859::AID-PSSB859>3.0.CO;2-H
    Search in Google Scholar
  23. [23] Wang Q. H., Bowser M. I., Swanson J. G., J. Appl. Phys., 76 (1994), 4209. http://dx.doi.org/10.1063/1.35737610.1063/1.357376
    Search in Google Scholar
  24. [24] Sawada T., Hasegawa H., Thin Solid Films, 56 (1979), 183. http://dx.doi.org/10.1016/0040-6090(79)90063-410.1016/0040-6090(79)90063-4
    Search in Google Scholar
  25. [25] Hasegawa H., Sawada T., Thin Solid Films, 103 (1983), 119. http://dx.doi.org/10.1016/0040-6090(83)90430-310.1016/0040-6090(83)90430-3
    Search in Google Scholar
  26. [26] Murray F., Carin R., Bogdanski P., J. Appl. Phys., 60 (1986), 3592. http://dx.doi.org/10.1063/1.33756410.1063/1.337564
    Search in Google Scholar
  27. [27] Yamasaki K., Yoshida M., Sugano T., Jpn. J. Appl. Phys., 18 (1979), 113. http://dx.doi.org/10.1143/JJAP.18.11310.1143/JJAP.18.113
    Search in Google Scholar
  28. [28] Schroder D. K., Semiconductor Material and Device Characterization, Wiley and Sons, New York, 1990.
    Search in Google Scholar
  29. [29] Martin G. M., Mitonneau A., Mircea A., Electron. Lett., 13 (1977), 191. http://dx.doi.org/10.1049/el:1977014010.1049/el:19770140
    Search in Google Scholar
  30. [30] Brug G. J., van Den Eeden A. L. G., Sluytersrehbah M., Sluyters J. H., J. Electroanal. Chem., 176 (1984), 275. http://dx.doi.org/10.1016/S0022-0728(84)80324-110.1016/S0022-0728(84)80324-1
    Search in Google Scholar
DOI: https://doi.org/10.2478/s13536-013-0124-6 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
Journal RSS Feed
Language: English
Page range: 446 - 453
Published on: Aug 29, 2013
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
MIS structure,
deep levels,
interface states,
admittance spectroscopy,
DLTS
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2013 S. Kochowski, Ł. Drewniak, K. Nitsch, R. Paszkiewicz, B. Paszkiewicz, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Previous articleVolume 31 (2013): Issue 3 (August 2013)Next article