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Analysis of MIS equivalent electrical circuit of Au/Pd/Ti-SiO2-GaAs structure based on DLTS measurements Cover

Analysis of MIS equivalent electrical circuit of Au/Pd/Ti-SiO2-GaAs structure based on DLTS measurements

Materials Science-Poland
Volume 31 (2013): Issue 3 (August 2013)
By: ,  ,  ,   and    
Open Access
|Aug 2013
Articles in this issue
DOI: https://doi.org/10.2478/s13536-013-0124-6 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
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Language: English
Page range: 446 - 453
Published on: Aug 29, 2013
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
MIS structure,
deep levels,
interface states,
admittance spectroscopy,
DLTS
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2013 S. Kochowski, Ł. Drewniak, K. Nitsch, R. Paszkiewicz, B. Paszkiewicz, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Volume 31 (2013): Issue 3 (August 2013)
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