Abstract
Pulsed magnetron sputtering of metal targets in the presence of reactive gas is widely used to deposit compound materials. This method is very popular but still the aim of research is to obtain more stable and efficient processes. The standard procedure of compound thin film deposition is sputtering in so called reactive mode of magnetron work — sputtering of the target surface covered with the formed compound. The authors postulate that the problem of low deposition rate of reactive compounds can be solved if the magnetron source operates in the metallic mode or near the border of metallic and transient mode. Aluminium oxide thin films were deposited using high effective reactive pulsed magnetron sputtering. The main purpose of the research was electrical characterization of metal-compound-metal structures in the wide range of frequencies and determination of deposition technique influence on the thin film properties.