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Electrically active defects in SiC Schottky barrier diodes Cover

Electrically active defects in SiC Schottky barrier diodes

Materials Science-Poland
Volume 29 (2011): Issue 1 (March 2011)
By: Łukasz Gelczuk,  Maria Dąbrowska-szata and  Zdzisław Synowiec  
Open Access
|Aug 2011

References

  1. [1] NEUDECK P. G., SiC Technology, in: Wai-Kai Chen, Boca Raton (Eds.) The VLSI Handbook 2nd, Florida: CRC Press, 2007.
    Search in Google Scholar
  2. [2] SYNOWIEC Z., Mater. Electron., 32 (2004), 5.
    Search in Google Scholar
  3. [3] LANG D.V, J. Appl. Phys., 45 (1974), 3023. http://dx.doi.org/10.1063/1.166371910.1063/1.1663719
    Search in Google Scholar
  4. [4] FERENCZI G. and KISS J., Acta Phys. Acad. Sci. Hung., 50 (1981), 285. http://dx.doi.org/10.1007/BF0315944410.1007/BF03159444
    Search in Google Scholar
  5. [5] GELCZUK ł., DĄBROWSKA-SZATA M., JOŹWIAK G., Mat. Sci. Poland, 23 (2005), 625.
    Search in Google Scholar
  6. [6] OMLING P., WEBER E.R., MONTELIUS L., ALEXANDER H. and MICHEL J., Phys. Rev. B 32 (1985), 6571. http://dx.doi.org/10.1103/PhysRevB.32.657110.1103/PhysRevB.32.6571
    Search in Google Scholar
  7. [7] FIGIELSKI T., Phys. Stat. Sol. A 121 (1990), 187. http://dx.doi.org/10.1002/pssa.221121012210.1002/pssa.2211210122
    Search in Google Scholar
  8. [8] WOSIŃSKI T., YASTRUBCHAK O., MąAKOSA A. and FIGIELSKI T., J. Phys.: Condens. Matter, 12 (2000), 10153 http://dx.doi.org/10.1088/0953-8984/12/49/31410.1088/0953-8984/12/49/314
    Search in Google Scholar
  9. [9] SGHAIER N., SOUIFI A., BLUET J.M. and GUILLOT G., Mat. Sci. Eng. C 21 (2002), 283. http://dx.doi.org/10.1016/S0928-4931(02)00081-410.1016/S0928-4931(02)00081-4
    Search in Google Scholar
  10. [10] HENRY C.H. and LANG D.V., Phys. Rev. B, 15 (1977), 989. http://dx.doi.org/10.1103/PhysRevB.15.98910.1103/PhysRevB.15.989
    Search in Google Scholar
  11. [11] SZATKOWSKI J., PŁACZEK-POPKO E., SIERAŃSKI K., FIAŁKOWSKI J., WRÓBEL J.M., BECLA P., Physica B., 273–274 (1999), 879. http://dx.doi.org/10.1016/S0921-4526(99)00539-610.1016/S0921-4526(99)00539-6
    Search in Google Scholar
  12. [12] SCHUBERT E.F., Doping in III-V Semiconductors, Cambridge Univ. Press, 1993. 10.1017/CBO9780511599828
    Search in Google Scholar
  13. [13] BEYER F., HEMMINGSSON C., PEDERSEN H., HENRY A., ISOYA J., MORISHITA N., OHSHIMA T. and JANZÉN E., Mat. Sci. Forum, 645–648 (2010), 435. http://dx.doi.org/10.4028/www.scientific.net/MSF.645-648.43510.4028/www.scientific.net/MSF.645-648.435
    Search in Google Scholar
  14. [14] STAIKOV P., BAUM D., LIN J.Y. and JIANG H.X., Solid State Commun., 89 (1994), 995. http://dx.doi.org/10.1016/0038-1098(94)90501-010.1016/0038-1098(94)90501-0
    Search in Google Scholar
  15. [15] FANG Z-Q., LOOK D.C., SAXLER A., MITCHEL W.C., Physica B, 308–310 (2001), 706. http://dx.doi.org/10.1016/S0921-4526(01)00876-610.1016/S0921-4526(01)00876-6
    Search in Google Scholar
DOI: https://doi.org/10.2478/s13536-011-0012-x | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
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Language: English
Page range: 70 - 75
Published on: Aug 3, 2011
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
SiC,
Schottky diode,
deep-level defect,
DLTS
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2011 Łukasz Gelczuk, Maria Dąbrowska-szata, Zdzisław Synowiec, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

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