Have a personal or library account? Click to login
Electrically active defects in SiC Schottky barrier diodes Cover

Electrically active defects in SiC Schottky barrier diodes

Materials Science-Poland
Volume 29 (2011): Issue 1 (March 2011)
By: Łukasz Gelczuk,  Maria Dąbrowska-szata and  Zdzisław Synowiec  
Open Access
|Aug 2011
DOI: https://doi.org/10.2478/s13536-011-0012-x | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
Journal RSS Feed
Language: English
Page range: 70 - 75
Published on: Aug 3, 2011
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
SiC,
Schottky diode,
deep-level defect,
DLTS
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2011 Łukasz Gelczuk, Maria Dąbrowska-szata, Zdzisław Synowiec, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Previous articleVolume 29 (2011): Issue 1 (March 2011)