Electrically active defects in SiC Schottky barrier diodes
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DOI: https://doi.org/10.2478/s13536-011-0012-x | Journal eISSN: 2083-134X (formerly 2083-124X) | Journal ISSN: 2083-1331
Language: English
Page range: 70 - 75
Published on: Aug 3, 2011
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
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© 2011 Łukasz Gelczuk, Maria Dąbrowska-szata, Zdzisław Synowiec, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.