Electrically active defects in SiC Schottky barrier diodes

The electrical properties of deep-level defects in real packaged SiC Schottky barrier rectifiers were studied by deep level transient spectroscopy (DLTS). One deep-level trap with an activation energy in the 0.29–0.30 eV range was revealed to be present in all the tested samples. The electrical characteristics of the trap indicate it is probably attributed to dislocations or to metastable defects, which can be responsible for discrepancies observed in I-V characteristics (see Ref. [2]).