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A High-Gain, High-Bandwidth, Bidirectional Discrete GaN-Based SyncFET dv/dt Sensor for MHz Power Converters Cover

A High-Gain, High-Bandwidth, Bidirectional Discrete GaN-Based SyncFET dv/dt Sensor for MHz Power Converters

Open Access
|Nov 2025

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DOI: https://doi.org/10.2478/pead-2025-0025 | Journal eISSN: 2543-4292 | Journal ISSN: 2451-0262
Language: English
Page range: 357 - 373
Submitted on: Aug 18, 2025
Accepted on: Oct 15, 2025
Published on: Nov 10, 2025
In partnership with: Paradigm Publishing Services
Publication frequency: 1 issue per year

© 2025 Bright K. Banzie, Francis B. Effah, John K. Annan, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution 4.0 License.