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A High-Gain, High-Bandwidth, Bidirectional Discrete GaN-Based SyncFET dv/dt Sensor for MHz Power Converters Cover

A High-Gain, High-Bandwidth, Bidirectional Discrete GaN-Based SyncFET dv/dt Sensor for MHz Power Converters

Power Electronics and Drives
Volume 10 (2025): Issue 1 (January 2025)
By: Bright K. Banzie,  Francis B. Effah and  John K. Annan  
Open Access
|Nov 2025
Authors

Authors

Bright K. Banzie

bbanzie@st.umat.edu.gh

Electrical and Electronic Engineering Department, University of Mines and Technology, Tarkwa, Ghana

Francis B. Effah

Electrical and Electronic Engineering Department, Kwame Nkrumah University of Science and Technology, Kumasi, Ghana

John K. Annan

Electrical and Electronic Engineering Department, University of Mines and Technology, Tarkwa, Ghana
DOI: https://doi.org/10.2478/pead-2025-0025 | Journal eISSN: 2543-4292 | Journal ISSN: 2451-0262
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Language: English
Page range: 357 - 373
Submitted on: Aug 18, 2025
Accepted on: Oct 15, 2025
Published on: Nov 10, 2025
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 1 issue per year
Keywords:
GaN,
synchronous capacitive dv/dt sensor,
high-frequency power converters,
active gate driver,
dv/dt control
Related subjects:
Computer sciences,
Artificial intelligence,
Engineering,
Electrical engineering,
Electronics

© 2025 Bright K. Banzie, Francis B. Effah, John K. Annan, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution 4.0 License.

Volume 10 (2025): Issue 1 (January 2025)
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