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Time-dependent gate breakdown reliability and gate leakage improvements in p-GaN MOS-HEMTs using Al2O3 gate dielectric
By: Tsung-I Liao, Sheng-Po Chang and Shoou-Jinn Chang
Language: English
Page range: 143 - 152
Submitted on: Jun 11, 2025
|Accepted on: Aug 4, 2025
|Published on: Jun 30, 2025
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
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© 2025 Tsung-I Liao, Sheng-Po Chang, Shoou-Jinn Chang, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.