Have a personal or library account? Click to login
Time-dependent gate breakdown reliability and gate leakage improvements in p-GaN MOS-HEMTs using Al2O3 gate dielectric Cover

Time-dependent gate breakdown reliability and gate leakage improvements in p-GaN MOS-HEMTs using Al2O3 gate dielectric

Materials Science-Poland
Volume 43 (2025): Issue 2 (June 2025)
By: Tsung-I Liao,  Sheng-Po Chang and  Shoou-Jinn Chang  
Open Access
|Jun 2025

Authors

Tsung-I Liao

Program on Semiconductor Manufacturing Technology, Academy of Innovative Semiconductor and Sustainable Manufacturing, National Cheng Kung University, Tainan City, Taiwan

Sheng-Po Chang

changsp@nkust.edu.tw

Department of Microelectronics Engineering, National Kaohsiung University of Science and Technology, Kaohsiung City 81157, Taiwan

Shoou-Jinn Chang

Institute of Microelectronics & Department of Electrical Engineering, National Cheng Kung University, Tainan City, Taiwan
DOI: https://doi.org/10.2478/msp-2025-0025 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
Journal RSS Feed
Language: English
Page range: 143 - 152
Submitted on: Jun 11, 2025
|
Accepted on: Aug 4, 2025
|
Published on: Jun 30, 2025
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
Enhancement-mode,
p-GaN gate MOS-HEMT,
Transfer length method,
Post-deposition annealing
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2025 Tsung-I Liao, Sheng-Po Chang, Shoou-Jinn Chang, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Previous articleVolume 43 (2025): Issue 2 (June 2025)Next article