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Time-dependent gate breakdown reliability and gate leakage improvements in p-GaN MOS-HEMTs using Al2O3 gate dielectric Cover

Time-dependent gate breakdown reliability and gate leakage improvements in p-GaN MOS-HEMTs using Al2O3 gate dielectric

Materials Science-Poland
Volume 43 (2025): Issue 2 (June 2025)
By: Tsung-I Liao,  Sheng-Po Chang and  Shoou-Jinn Chang  
Open Access
|Jun 2025

Figures & Tables

Figure 1

Schematic cross-sectional structure of the (a) p-GaN gate HEMT with ohmic gate contact and (b) the MOS-HEMT.

Figure 2

Cross-sectional TEM image of an over-etched substrate (containing oxidized [white]) and residual [light gray] AlGaN) by selective etching between p-GaN and AlGaN (top) and element distribution in the over-etched substrate generated from the EDS line scan (bottom).

Figure 3

TLM results of (a) the p-GaN gate HEMT with ohmic gate contact and the MOS-HEMTs (b) before and (c) after PDA treatment.

Figure 4

(a) Transfer characteristics of the HEMT with ohmic gate contact in linear scale: the left Y-axis shows the drain current, and the right Y-axis shows the transconductance. (b) Transfer characteristics in logarithmic scale: the left Y-axis shows the drain current, and the right Y-axis shows the gate leakage current. (c) Output characteristics of the device under different gate voltages.

Figure 5

(a) Comparison of transfer characteristics among the three types of HEMTs in a log scale and (b) in a linear scale.

Figure 6

Comparison of I G–V G characteristics among the three types of HEMTs.

Figure 7

TDGB of MOS-HEMTs without (a) and with (d) PDA, Weibull plots of MOS-HEMTs without (b) and with (e) PDA, and lifetime predictions of MOS-HEMTs without (c) and with (f) PDA.

Comparison of switching performance parameters with other E-mode GaN-based devices_

References I ON /I OFF SS (mV/dec) V th (V)
This work (w/PDA)109 71.261.05
[19]105 —2.40
[28]109 1160.70
[29]106 —0.50
[30]109 950.30
[31]104 2050.49
[32]108 —1.10

Comparison of typical performance parameters among the three types of HEMTs_

ParametersOhmic gateMOS-HEMT (w/o PDA)MOS-HEMT (w/PDA)
V th (V)0.811.151.05
SS (mV/dec)75.6189.7971.26
g m,max (mS/mm)76.6440.3318.33
Field effect mobility (cm2/V s)68415371.4
I ON /I OFF 2.17 × 1011 2.48 × 108 5.64 × 109
DOI: https://doi.org/10.2478/msp-2025-0025 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
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Language: English
Page range: 143 - 152
Submitted on: Jun 11, 2025
|
Accepted on: Aug 4, 2025
|
Published on: Jun 30, 2025
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
Enhancement-mode,
p-GaN gate MOS-HEMT,
Transfer length method,
Post-deposition annealing
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2025 Tsung-I Liao, Sheng-Po Chang, Shoou-Jinn Chang, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

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