Pt/Al2O3/HfO2/Ti/TiN bi-layer RRAM device for imply–inhibit logic applications: Unveiling the resistive potential by experiment and simulation
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DOI: https://doi.org/10.2478/msp-2025-0016 | Journal eISSN: 2083-134X (formerly 2083-124X) | Journal ISSN: 2083-1331
Language: English
Page range: 196 - 209
Submitted on: Feb 5, 2025
Accepted on: May 25, 2025
Published on: Mar 31, 2025
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Keywords:
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© 2025 Nithya Natarajan, Paramasivam Kuppusamy, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.