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Pt/Al2O3/HfO2/Ti/TiN bi-layer RRAM device for imply–inhibit logic applications: Unveiling the resistive potential by experiment and simulation Cover

Pt/Al2O3/HfO2/Ti/TiN bi-layer RRAM device for imply–inhibit logic applications: Unveiling the resistive potential by experiment and simulation

Materials Science-Poland
Volume 43 (2025): Issue 1 (March 2025)
By: Nithya Natarajan and  Paramasivam Kuppusamy  
Open Access
|Mar 2025

Authors

Nithya Natarajan

nithyasuresh1311@gmail.com

Department of Electrical and Electronics Engineering, Kumaraguru College of Technology, Coimbatore-641049, India

Paramasivam Kuppusamy

Department of Electrical and Electronics Engineering, Kumaraguru College of Technology, Coimbatore-641049, India
DOI: https://doi.org/10.2478/msp-2025-0016 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
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Language: English
Page range: 196 - 209
Submitted on: Feb 5, 2025
Accepted on: May 25, 2025
Published on: Mar 31, 2025
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
AlO/HfO bi-layer RRAM,
Atomic layer deposition,
VTEAM,
Resistive switching,
Imply–inhibit logic
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2025 Nithya Natarajan, Paramasivam Kuppusamy, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

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