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Hafnium dioxide effect on the electrical properties of M/n-GaN structure Cover

Hafnium dioxide effect on the electrical properties of M/n-GaN structure

Materials Science-Poland
Volume 38 (2020): Issue 1 (March 2020)
By: ,  ,  ,  ,   and    
Open Access
|May 2020
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DOI: https://doi.org/10.2478/msp-2020-0020 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
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Language: English
Page range: 165 - 173
Submitted on: Dec 21, 2018
Accepted on: Apr 23, 2019
Published on: May 8, 2020
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
Schottky diode,
Pt/n-GaN,
Pt/HfO2/n-GaN,
(I-V),
Norde,
Cheung,
Mikhelashvili and Chattopadhyay methods,
modified Richardson equation
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2020 Sadoun Ali, Mansouri Sedik, Chellali Mohammed, Lakhdar Nacereddine, Hima Abdelkader, Benamara Zineb, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Volume 38 (2020): Issue 1 (March 2020)
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