Hafnium dioxide effect on the electrical properties of M/n-GaN structure

In the present paper, using of SILVACO-TCAD numerical simulator for studying the enhancement in Pt/n-GaN Schottky diode current–voltage (I-V) characteristics by introduction of a layer of hafnium dioxide (HfO₂) (with a thickness e = 5 nm) between the Pt contact and semiconductor interface of GaN is reported. The simulation of I-V characteristics of Pt/n-GaN was done at a temperature of 300 K. However, the simulation of Pt/HfO₂/n-GaN structure was performed in a temperature range of 270 – 390 K at steps of 30 K. The electrical parameters: barrier height (Φ_b), ideality factor and series resistance have been calculated using different methods: conventional I-V, Norde, Cheung, Chattopadhyay and Mikhelashvili. Statistical analysis showed that the metal-insulator-semiconductor (Pt/HfO₂/n-GaN) structure has a barrier height of 0.79 eV which is higher compared with the (Pt/n-GaN) structure (0.56 eV). The parameters of modified Richardson ((ln(I0T2)-(q2σs022kT2)=ln(AA*)-q∅B0kT)(\left( {\ln \left( {{{{{\rm{I}}_0}} \over {{{\rm{T}}^{\rm{2}}}}}} \right) - \left( {{{{{\rm{q}}^2}\sigma _{{\rm{s}}0}^2} \over {2{\rm{k}}{{\rm{T}}^2}}}} \right) = \ln \left( {{\rm{AA*}}} \right) - {{{\rm{q}}{\emptyset _{{\rm{B}}0}}} \over {{\rm{kT}}}}} \right) equation versus (1kT{1 \over {{\rm{kT}}}}) have been extracted using the mentioned methods. The following values: ASimul*=22.65 A/cm2⋅K2{\rm{A}}_{{\rm{Simul}}}^* = 22.65\,{\rm{A/c}}{{\rm{m}}^{\rm{2}}} \cdot {{\rm{K}}^2}, 14.29 A/cm² K², 25.53 A/cm² K² and 21.75 A/cm² K² were found. The Chattopadhyay method occurred the best method for estimation the theoretical values of Richardson constant.