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Hafnium dioxide effect on the electrical properties of M/n-GaN structure Cover

Hafnium dioxide effect on the electrical properties of M/n-GaN structure

Materials Science-Poland
Volume 38 (2020): Issue 1 (March 2020)
By: Sadoun Ali,  Mansouri Sedik,  Chellali Mohammed,  Lakhdar Nacereddine,  Hima Abdelkader and  Benamara Zineb  
Open Access
|May 2020

Authors

Sadoun Ali

3ali39@gmail.com

Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel Abbes, Sidi Bel Abbes, Algeria

Mansouri Sedik

Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel Abbes, Sidi Bel Abbes, Algeria

Chellali Mohammed

Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel Abbes, Sidi Bel Abbes, Algeria

Lakhdar Nacereddine

University of El Oued, Fac. Technology, El Oued, Algeria

Hima Abdelkader

University of El Oued, Fac. Technology, El Oued, Algeria

Benamara Zineb

Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel Abbes, Sidi Bel Abbes, Algeria
DOI: https://doi.org/10.2478/msp-2020-0020 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
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Language: English
Page range: 165 - 173
Submitted on: Dec 21, 2018
Accepted on: Apr 23, 2019
Published on: May 8, 2020
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
Schottky diode,
Pt/n-GaN,
Pt/HfO/n-GaN,
(I-V),
Norde,
Cheung,
Mikhelashvili and Chattopadhyay methods,
modified Richardson equation
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2020 Sadoun Ali, Mansouri Sedik, Chellali Mohammed, Lakhdar Nacereddine, Hima Abdelkader, Benamara Zineb, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

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