Hafnium dioxide effect on the electrical properties of M/n-GaN structure
Authors
Sadoun Ali
Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel Abbes, Sidi Bel Abbes, Algeria
Mansouri Sedik
Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel Abbes, Sidi Bel Abbes, Algeria
Chellali Mohammed
Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel Abbes, Sidi Bel Abbes, Algeria
Lakhdar Nacereddine
University of El Oued, Fac. Technology, El Oued, Algeria
Hima Abdelkader
University of El Oued, Fac. Technology, El Oued, Algeria
Benamara Zineb
Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel Abbes, Sidi Bel Abbes, Algeria
Language: English
Page range: 165 - 173
Submitted on: Dec 21, 2018
Accepted on: Apr 23, 2019
Published on: May 8, 2020
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
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© 2020 Sadoun Ali, Mansouri Sedik, Chellali Mohammed, Lakhdar Nacereddine, Hima Abdelkader, Benamara Zineb, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.