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Investigation, analysis and comparison of current-voltage characteristics for Au/Ni/GaN Schottky structure using I-V-T simulation Cover

Investigation, analysis and comparison of current-voltage characteristics for Au/Ni/GaN Schottky structure using I-V-T simulation

Materials Science-Poland
Volume 37 (2019): Issue 3 (September 2019)
By: ,  ,  ,  ,   and    
Open Access
|Oct 2019
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DOI: https://doi.org/10.2478/msp-2019-0041 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
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Language: English
Page range: 496 - 502
Submitted on: Jan 5, 2019
Accepted on: Apr 25, 2019
Published on: Oct 18, 2019
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
Schottky diode,
Au/Ni/n-GaN,
temperature effects,
I-V characteristics,
Cheung and Chattopadhyay method,
SILVACO-TCAD
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2019 A. Sadoun, S. Mansouri, M. Chellali, N. Lakhdar, A. Hima, Z. Benamara, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Volume 37 (2019): Issue 3 (September 2019)
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