Investigation, analysis and comparison of current-voltage characteristics for Au/Ni/GaN Schottky structure using I-V-T simulation

A. Sadoun; S. Mansouri; M. Chellali; N. Lakhdar; A. Hima; Z. Benamara

doi:10.2478/msp-2019-0041

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Investigation, analysis and comparison of current-voltage characteristics for Au/Ni/GaN Schottky structure using I-V-T simulation

Materials Science-Poland

Volume 37 (2019): Issue 3 (September 2019)

By: A. Sadoun, S. Mansouri, M. Chellali, N. Lakhdar, A. Hima and Z. Benamara

Open Access

|Oct 2019

Abstract

In this work, we have presented a theoretical study of Au/Ni/GaN Schottky diode based on current-voltage (I-V) measurement for temperature range of 120 K to 400 K. The electrical parameters of Au/Ni/GaN, such as barrier height (Φ_b), ideality factor and series resistance have been calculated employing the conventional current-voltage (I-V), Cheung and Chattopadhyay method. Also, the variation of Gaussian distribution (P (Φ_b)) as a function of barrier height (Φ_b) has been studied. Therefore, the modified $((\ln (\frac{I_{0}}{T^{2}}) - (\frac{q^{2} σ_{s 0}^{2}}{2 {kT}^{2}}) = \ln (AA *) - \frac{q \emptyset_{B 0}}{kT}) vs . (\frac{1}{kT}))$ ( {( {\ln \left( {{{{\rm{I}}_0 } \over {{\rm{T}}^2 }}} \right) - \left( {{{{\rm{q}}^2 \sigma _{{\rm{s}}0}^2 } \over {2{\rm{kT}}^2 }}} \right) = \ln ( {{\rm{AA}}^*} ) - {{{\rm{q}}\emptyset_{{\rm B}0} } \over {{\rm{kT}}}}} ){\rm{vs}}.( {{1 \over {{\rm{kT}}}}} )} ) relation has been extracted from (I-V) characteristics, where the values of Φ_B0 and $A_{Simul}^{*}$ {\rm{A}}_{{\rm{Simul}}}^* have been found in different temperature ranges. The obtained results have been compared to the existing experimental data and a good agreement was found.

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Articles in this issue

DOI: https://doi.org/10.2478/msp-2019-0041 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331

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Language: English

Page range: 496 - 502

Submitted on: Jan 5, 2019

Accepted on: Apr 25, 2019

Published on: Oct 18, 2019

Published by: Wroclaw University of Science and Technology

In partnership with: Paradigm Publishing Services

Publication frequency: 4 issues per year

Keywords:

Cheung and Chattopadhyay method,

SILVACO-TCAD

Related subjects:

Materials sciences,

Materials sciences, other,

Nanomaterials,

Functional and smart materials,

Materials characterization and properties

© 2019 A. Sadoun, S. Mansouri, M. Chellali, N. Lakhdar, A. Hima, Z. Benamara, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

Volume 37 (2019): Issue 3 (September 2019)