Investigation, analysis and comparison of current-voltage characteristics for Au/Ni/GaN Schottky structure using I-V-T simulation
By: A. Sadoun, S. Mansouri, M. Chellali, N. Lakhdar, A. Hima and Z. Benamara
Authors
A. Sadoun
Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel Abbes, Sidi Bel Abbes, Algeria
S. Mansouri
Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel Abbes, Sidi Bel Abbes, Algeria
M. Chellali
Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel Abbes, Sidi Bel Abbes, Algeria
N. Lakhdar
University of El Oued, Fac. Technology, Department of electrical engineering, El Oued, Algeria
A. Hima
University of El Oued, Fac. Technology, Department of electrical engineering, El Oued, Algeria
Z. Benamara
Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel Abbes, Sidi Bel Abbes, Algeria
Language: English
Page range: 496 - 502
Submitted on: Jan 5, 2019
Accepted on: Apr 25, 2019
Published on: Oct 18, 2019
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
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© 2019 A. Sadoun, S. Mansouri, M. Chellali, N. Lakhdar, A. Hima, Z. Benamara, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.