Investigation, analysis and comparison of current-voltage characteristics for Au/Ni/GaN Schottky structure using I-V-T simulation

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Open Access

|Oct 2019

Authors

Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel Abbes, Sidi Bel Abbes, Algeria

Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel Abbes, Sidi Bel Abbes, Algeria

Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel Abbes, Sidi Bel Abbes, Algeria

University of El Oued, Fac. Technology, Department of electrical engineering, El Oued, Algeria

University of El Oued, Fac. Technology, Department of electrical engineering, El Oued, Algeria

Laboratoire de Micro-Electronique Appliquée, Université Djillali Liables de Sidi Bel Abbes, Sidi Bel Abbes, Algeria

DOI: https://doi.org/10.2478/msp-2019-0041 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331

Language: English

Page range: 496 - 502

Submitted on: Jan 5, 2019

Accepted on: Apr 25, 2019

Published on: Oct 18, 2019

In partnership with: Paradigm Publishing Services

Publication frequency: 4 issues per year

Keywords:

Related subjects:

© 2019 A. Sadoun, S. Mansouri, M. Chellali, N. Lakhdar, A. Hima, Z. Benamara, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.