Investigation, analysis and comparison of current-voltage characteristics for Au/Ni/GaN Schottky structure using I-V-T simulation

Sadoun, A.; Mansouri, S.; Chellali, M.; Lakhdar, N.; Hima, A.; Benamara, Z.

doi:10.2478/msp-2019-0041

Abstract

In this work, we have presented a theoretical study of Au/Ni/GaN Schottky diode based on current-voltage (I-V) measurement for temperature range of 120 K to 400 K. The electrical parameters of Au/Ni/GaN, such as barrier height (Φ_b), ideality factor and series resistance have been calculated employing the conventional current-voltage (I-V), Cheung and Chattopadhyay method. Also, the variation of Gaussian distribution (P (Φ_b)) as a function of barrier height (Φ_b) has been studied. Therefore, the modified $((\ln (\frac{I_{0}}{T^{2}}) - (\frac{q^{2} σ_{s 0}^{2}}{2 {kT}^{2}}) = \ln (AA *) - \frac{q \emptyset_{B 0}}{kT}) vs . (\frac{1}{kT}))$ ( {( {\ln \left( {{{{\rm{I}}_0 } \over {{\rm{T}}^2 }}} \right) - \left( {{{{\rm{q}}^2 \sigma _{{\rm{s}}0}^2 } \over {2{\rm{kT}}^2 }}} \right) = \ln ( {{\rm{AA}}^*} ) - {{{\rm{q}}\emptyset_{{\rm B}0} } \over {{\rm{kT}}}}} ){\rm{vs}}.( {{1 \over {{\rm{kT}}}}} )} ) relation has been extracted from (I-V) characteristics, where the values of Φ_B0 and $A_{Simul}^{*}$ {\rm{A}}_{{\rm{Simul}}}^* have been found in different temperature ranges. The obtained results have been compared to the existing experimental data and a good agreement was found.

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Investigation, analysis and comparison of current-voltage characteristics for Au/Ni/GaN Schottky structure using I-V-T simulation

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