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Temperature dependence of the energy band gap of CuSi2P3 semiconductor using PSOPW method Cover

Temperature dependence of the energy band gap of CuSi2P3 semiconductor using PSOPW method

Materials Science-Poland
Volume 36 (2018): Issue 4 (December 2018)
By: T.G. Abdullah,  S.A. Sami and  M.S. Omar  
Open Access
|Feb 2019

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DOI: https://doi.org/10.2478/msp-2018-0085 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
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Language: English
Page range: 553 - 562
Submitted on: Dec 23, 2016
Accepted on: Aug 10, 2018
Published on: Feb 1, 2019
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
CuSi2P3,
ternary semiconductors,
PSOPW,
energy gap,
Debye temperature
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2019 T.G. Abdullah, S.A. Sami, M.S. Omar, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

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