Temperature dependence of the energy band gap of CuSi2P3 semiconductor using PSOPW method Cover

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Temperature dependence of the energy band gap of CuSi2P3 semiconductor using PSOPW method

Materials Science-Poland

Volume 36 (2018): Issue 4 (December 2018)

By: T.G. Abdullah, S.A. Sami and M.S. Omar

Open Access

|Feb 2019

Authors

T.G. Abdullah

Department of Physics, College of Science, Salahaddin University-Erbil, Kurdistan, Iraq

S.A. Sami

Department of Physics, College of Science, Duhok University, Kurdistan, Iraq

M.S. Omar

dr_m_s_omar@yahoo.com

Department of Physics, College of Science, Salahaddin University-Erbil, Kurdistan, Iraq

DOI: https://doi.org/10.2478/msp-2018-0085 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331

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Language: English

Page range: 553 - 562

Submitted on: Dec 23, 2016

Accepted on: Aug 10, 2018

Published on: Feb 1, 2019

Published by: Wroclaw University of Science and Technology

In partnership with: Paradigm Publishing Services

Publication frequency: 4 issues per year

Keywords:

ternary semiconductors,

Debye temperature

Related subjects:

Materials sciences,

Materials sciences, other,

Functional and smart materials,

Materials characterization and properties

© 2019 T.G. Abdullah, S.A. Sami, M.S. Omar, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

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