Have a personal or library account? Click to login
Temperature dependence of the energy band gap of CuSi2P3 semiconductor using PSOPW method Cover

Temperature dependence of the energy band gap of CuSi2P3 semiconductor using PSOPW method

Materials Science-Poland
Volume 36 (2018): Issue 4 (December 2018)
By: T.G. Abdullah,  S.A. Sami and  M.S. Omar  
Open Access
|Feb 2019

Download Article

Download the full article as a PDF file.

DOI: https://doi.org/10.2478/msp-2018-0085 | Journal eISSN: 2083-134X | Journal ISSN: 2083-1331
Journal RSS Feed
Language: English
Page range: 553 - 562
Submitted on: Dec 23, 2016
Accepted on: Aug 10, 2018
Published on: Feb 1, 2019
Published by: Wroclaw University of Science and Technology
In partnership with: Paradigm Publishing Services
Publication frequency: 4 issues per year
Keywords:
CuSi2P3,
ternary semiconductors,
PSOPW,
energy gap,
Debye temperature
Related subjects:
Materials sciences,
Materials sciences, other,
Nanomaterials,
Functional and smart materials,
Materials characterization and properties

© 2019 T.G. Abdullah, S.A. Sami, M.S. Omar, published by Wroclaw University of Science and Technology
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Previous articleVolume 36 (2018): Issue 4 (December 2018)Next article