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Electrical performance estimation and comparative study of heterojunction strained and conventional gate all around nanosheet field effect transistors

Open Access
|Dec 2023

References

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DOI: https://doi.org/10.2478/jee-2023-0058 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632
Language: English
Page range: 503 - 512
Submitted on: Oct 2, 2023
Published on: Dec 14, 2023
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
Publication frequency: 6 times per year

© 2023 Reza Abbasnezhad, Hassan Rasooli Saghai, Reza Hosseini, Aliasghar Sedghi, Ali Vahedi, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.