Electrical performance estimation and comparative study of heterojunction strained and conventional gate all around nanosheet field effect transistors
Authors
Reza Abbasnezhad
Department of Electrical Engineering, Shabestar Branch, Islamic Azad University, Shabestar, Iran
Hassan Rasooli Saghai
Department of Electrical Engineering, Tabriz Branch, Islamic Azad University, Tabriz, Iran
Reza Hosseini
Department of Electrical Engineering, Khoy Branch, Islamic Azad University, Khoy, Iran
Aliasghar Sedghi
Department of Physics, Shabestar Branch, Islamic Azad University, Shabestar, Iran
Ali Vahedi
Department of Physics, Tabriz Branch, Islamic Azad University, Tabriz, Iran
Language: English
Page range: 503 - 512
Submitted on: Oct 2, 2023
Published on: Dec 14, 2023
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
Publication frequency: 6 times per year
Keywords:
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© 2023 Reza Abbasnezhad, Hassan Rasooli Saghai, Reza Hosseini, Aliasghar Sedghi, Ali Vahedi, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.