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Electrical performance estimation and comparative study of heterojunction strained and conventional gate all around nanosheet field effect transistors Cover

Electrical performance estimation and comparative study of heterojunction strained and conventional gate all around nanosheet field effect transistors

Journal of Electrical Engineering
Volume 74 (2023): Issue 6 (December 2023)
By: Reza Abbasnezhad,  Hassan Rasooli Saghai,  Reza Hosseini,  Aliasghar Sedghi and  Ali Vahedi  
Open Access
|Dec 2023

Authors

Reza Abbasnezhad

Department of Electrical Engineering, Shabestar Branch, Islamic Azad University, Shabestar, Iran

Hassan Rasooli Saghai

Department of Electrical Engineering, Tabriz Branch, Islamic Azad University, Tabriz, Iran

Reza Hosseini

hosseini@iaukhoy.ac.ir

Department of Electrical Engineering, Khoy Branch, Islamic Azad University, Khoy, Iran

Aliasghar Sedghi

Department of Physics, Shabestar Branch, Islamic Azad University, Shabestar, Iran

Ali Vahedi

Department of Physics, Tabriz Branch, Islamic Azad University, Tabriz, Iran
DOI: https://doi.org/10.2478/jee-2023-0058 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632
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Language: English
Page range: 503 - 512
Submitted on: Oct 2, 2023
|
Published on: Dec 14, 2023
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
Publication frequency: 6 issues per year
Keywords:
nanosheet,
heterojunction GAA NS FET,
conventional GAA NS FET,
density gradient,
on-state,
off-state
Related subjects:
Engineering,
Introductions and overviews,
Engineering, other

© 2023 Reza Abbasnezhad, Hassan Rasooli Saghai, Reza Hosseini, Aliasghar Sedghi, Ali Vahedi, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

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