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Electrical performance estimation and comparative study of heterojunction strained and conventional gate all around nanosheet field effect transistors

Journal of Electrical Engineering
Volume 74 (2023): Issue 6 (December 2023)
By:
Open Access
|Dec 2023

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DOI: https://doi.org/10.2478/jee-2023-0058 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632
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Language: English
Page range: 503 - 512
Submitted on: Oct 2, 2023
Published on: Dec 14, 2023
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
Publication frequency: 6 times per year
Keywords:
nanosheet,
heterojunction GAA NS FET,
conventional GAA NS FET,
density gradient,
on-state,
off-state
Related subjects:
Engineering,
Introductions and overviews,
Engineering, other

© 2023 Reza Abbasnezhad, Hassan Rasooli Saghai, Reza Hosseini, Aliasghar Sedghi, Ali Vahedi, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

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