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Electrical performance estimation and comparative study of heterojunction strained and conventional gate all around nanosheet field effect transistors Cover

Electrical performance estimation and comparative study of heterojunction strained and conventional gate all around nanosheet field effect transistors

Journal of Electrical Engineering
Volume 74 (2023): Issue 6 (December 2023)
By: Reza Abbasnezhad,  Hassan Rasooli Saghai,  Reza Hosseini,  Aliasghar Sedghi and  Ali Vahedi  
Open Access
|Dec 2023
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DOI: https://doi.org/10.2478/jee-2023-0058 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632
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Language: English
Page range: 503 - 512
Submitted on: Oct 2, 2023
Published on: Dec 14, 2023
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
Publication frequency: 6 issues per year
Keywords:
nanosheet,
heterojunction GAA NS FET,
conventional GAA NS FET,
density gradient,
on-state,
off-state
Related subjects:
Engineering,
Introductions and overviews,
Engineering, other

© 2023 Reza Abbasnezhad, Hassan Rasooli Saghai, Reza Hosseini, Aliasghar Sedghi, Ali Vahedi, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Volume 74 (2023): Issue 6 (December 2023)
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