Analysis of porous silicon structures using FTIR and Raman spectroscopy

Martin Králik; Martin Kopani

doi:10.2478/jee-2023-0028

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Analysis of porous silicon structures using FTIR and Raman spectroscopy

Journal of Electrical Engineering

Volume 74 (2023): Issue 3 (June 2023)

By: Martin Králik and Martin Kopani

Open Access

|Jul 2023

Abstract

This work deals with the production of porous silicon samples by electrochemical etching method and their analysis using FTIR and Raman spectroscopy. Porous silicon samples were prepared under various conditions, such as etching time and current density. A p-type silicon substrate was used to prepare the porous silicon structures. FTIR spectroscopy was performed to determine the chemical bonds formed during the etching process. The structural properties of the prepared samples were investigated by Raman spectroscopy.

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Articles in this issue

DOI: https://doi.org/10.2478/jee-2023-0028 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632

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Language: English

Page range: 218 - 227

Submitted on: Feb 21, 2023

Published on: Jul 22, 2023

Published by: Slovak University of Technology in Bratislava

In partnership with: Paradigm Publishing Services

Publication frequency: 6 issues per year

Keywords:

electrochemical etching,

Related subjects:

Introductions and overviews,

Engineering, other

© 2023 Martin Králik, Martin Kopani, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

Volume 74 (2023): Issue 3 (June 2023)