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Thickness and tensile stress determination of black silicon layers by spectral reflectance and Raman scattering Cover

Thickness and tensile stress determination of black silicon layers by spectral reflectance and Raman scattering

Journal of Electrical Engineering
Volume 70 (2019): Issue 7 (December 2019)
By: Martin Králik,  Stanislav Jurečka and  Emil Pinčík  
Open Access
|Sep 2019

Authors

Martin Králik

martin.kralik@fel.uniza.sk

Institute of Aurel Stodola, Faculty of Electrical Engineering, University of Žilina, Liptovský Mikuláš, Slovakia

Stanislav Jurečka

Institute of Aurel Stodola, Faculty of Electrical Engineering, University of Žilina, Liptovský Mikuláš, Slovakia

Emil Pinčík

Institute of Physics, Slovak Academy of Sciences, Bratislava, Slovakia
DOI: https://doi.org/10.2478/jee-2019-0041 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632
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Language: English
Page range: 51 - 57
Submitted on: Mar 19, 2019
|
Published on: Sep 28, 2019
Published by: Slovak University of Technology in Bratislava
In partnership with: Paradigm Publishing Services
Publication frequency: 6 issues per year
Keywords:
Raman scattering,
porous silicon,
black silicon,
spectral reflectance,
anodic etching,
electrochemical etching,
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© 2019 Martin Králik, Stanislav Jurečka, Emil Pinčík, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

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