Electron Beam Lithography Double Step Exposure Technique for Fabrication of Mushroom-Like Profile in Bilayer Resist System

References

[1] ROBIN, F.–MEIER, H.–HOMAN, O. J.–BACHTOLD, W.: A novel Asymmetric gate recess process for InP HEMTs, 14th Indium Phosphide and Related Materials Conference, 2002, pp. 221-224.
Search in Google Scholar
[2] CHANG, E. Y.–LIN, K. C.–LIU, E. H.–CHANG, C. Y.– CHEN, T. H.–CHEN, J.: Submicron T-Shaped Gate HEMT Fabrication Using Deep-UV Lithography, IEEE Electron Device Letters 15 No. 8, 277-279.10.1109/55.296215
Search in Google Scholar
[3] TODOKORO, Y.: Double-Layer Resist Films for Submicrome-ter Electron-Beam Lithography, IEEE Transactions on Electron Devices 27 No. 8, 1443-1448.10.1109/T-ED.1980.20054
Search in Google Scholar
[4] HERZOG, R. F.–GREENEICH, J. S.–EVERHART, T. E.: Computer-Controlled Resist Exposure in the Scanning Electron Microscope, IEEE Transactions on Electron Devices 19 No. 5, 635-641.10.1109/T-ED.1972.17465
Search in Google Scholar
[5] GREENEICH, J. S.:VAN DUZER, T.: Model for Exposure of Electron-Sensitive Resists, Journal of Vacuum Science and Technology 10 No. 6, 1056-1059.
Search in Google Scholar