Electron Beam Lithography Double Step Exposure Technique for Fabrication of Mushroom-Like Profile in Bilayer Resist System

Indykiewicz Kornelia; Paszkiewicz Bogdan; Szymański Tomasz; Paszkiewicz Regina

doi:10.2478/jee-2014-0062

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Electron Beam Lithography Double Step Exposure Technique for Fabrication of Mushroom-Like Profile in Bilayer Resist System

Journal of Electrical Engineering

Volume 65 (2014): Issue 6 (November 2014)

By: Indykiewicz Kornelia, Paszkiewicz Bogdan, Szymański Tomasz and Paszkiewicz Regina

Open Access

|Jan 2015

Abstract

The Hi/Lo bilayer resist system exposure in e-beam lithography (EBL) process, intended for mushroom-like profile fabrication, was studied. Different exposure parameters and theirs influence on the resist layers were simulated in CASINO software and the obtained results were compared with the experimental data. The AFM technique was used for the estimation of the e-beam penetration depth in the resist stack. Performed numerical and experimental results allow us to establish the useful ranges of the exposure parameters.

References

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DOI: https://doi.org/10.2478/jee-2014-0062 | Journal eISSN: 1339-309X | Journal ISSN: 1335-3632

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Language: English

Page range: 381 - 385

Submitted on: Jun 15, 2014

Published on: Jan 31, 2015

Published by: Slovak University of Technology in Bratislava

In partnership with: Paradigm Publishing Services

Publication frequency: 6 issues per year

Keywords:

T-shape resist profile,

mushroom-like resist profile,

bilayer resist system,

resist exposure model,

Related subjects:

Introductions and overviews,

Engineering, other

© 2015 Indykiewicz Kornelia, Paszkiewicz Bogdan, Szymański Tomasz, Paszkiewicz Regina, published by Slovak University of Technology in Bratislava
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 3.0 License.

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