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Germanium Gradient Optimization for High-Speed Silicon Germanium Hetero-Junction Bipolar Transistors Cover

Germanium Gradient Optimization for High-Speed Silicon Germanium Hetero-Junction Bipolar Transistors

Annals of West University of Timisoara - Physics
Volume 61 (2019): Issue 1 (December 2019)
By: Abdelkader Khadir,  Nouredine Sengouga and  Mohamed Kamel Abdelhafidi  
Open Access
|Jan 2020

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DOI: https://doi.org/10.2478/awutp-2019-0002 | Journal eISSN: 2784-1057 | Journal ISSN: 1224-9718
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Language: English
Page range: 22 - 32
Submitted on: Sep 29, 2019
Accepted on: Nov 27, 2019
Published on: Jan 21, 2020
Published by: West University of Timisoara
In partnership with: Paradigm Publishing Services
Publication frequency: 1 issue per year
Keywords:
SiGe HBT,
SILVACO,
Trapezoidal profile,
Current Gain,
Cut-off frequency,
Maximum oscillation frequency
Related subjects:
Materials sciences,
Modeling and simulations,
Physics,
Theoretical and mathematical physics,
Condensed matter physics,
Medical physics

© 2020 Abdelkader Khadir, Nouredine Sengouga, Mohamed Kamel Abdelhafidi, published by West University of Timisoara
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

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