Germanium Gradient Optimization for High-Speed Silicon Germanium Hetero-Junction Bipolar Transistors

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Open Access

|Jan 2020

Authors

Laboratory of metallic and semiconducting materials, University of Biskra, Biskra, Algeria

Materials Science and Informatics Laboratory, University of Djelfa, Djelfa, Algeria

Laboratory of metallic and semiconducting materials, University of Biskra, Biskra, Algeria

Laboratory of metallic and semiconducting materials, University of Biskra, Biskra, Algeria

Materials Science and Informatics Laboratory, University of Djelfa, Djelfa, Algeria

DOI: https://doi.org/10.2478/awutp-2019-0002 | Journal eISSN: 2784-1057 | Journal ISSN: 1224-9718

Language: English

Page range: 22 - 32

Submitted on: Sep 29, 2019

Accepted on: Nov 27, 2019

Published on: Jan 21, 2020

Published by: West University of Timisoara

In partnership with: Paradigm Publishing Services

Publication frequency: 1 issue per year

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© 2020 Abdelkader Khadir, Nouredine Sengouga, Mohamed Kamel Abdelhafidi, published by West University of Timisoara
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.