Germanium Gradient Optimization for High-Speed Silicon Germanium Hetero-Junction Bipolar Transistors
Authors
Abdelkader Khadir
Laboratory of metallic and semiconducting materials, University of Biskra, Biskra, Algeria
Materials Science and Informatics Laboratory, University of Djelfa, Djelfa, Algeria
Nouredine Sengouga
Laboratory of metallic and semiconducting materials, University of Biskra, Biskra, Algeria
Mohamed Kamel Abdelhafidi
Laboratory of metallic and semiconducting materials, University of Biskra, Biskra, Algeria
Materials Science and Informatics Laboratory, University of Djelfa, Djelfa, Algeria
Language: English
Page range: 22 - 32
Submitted on: Sep 29, 2019
Accepted on: Nov 27, 2019
Published on: Jan 21, 2020
Published by: West University of Timisoara
In partnership with: Paradigm Publishing Services
Publication frequency: 1 issue per year
Keywords:
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© 2020 Abdelkader Khadir, Nouredine Sengouga, Mohamed Kamel Abdelhafidi, published by West University of Timisoara
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.