References
- [1] C. K. Maiti, G. A. Armstrong. Applications of Silicon–Germanium Hetero-structure Devices, IOP Publishing Ltd, Bristol, (2001)10.1201/9781420034691
- [2] B. Senapati, C. K. Maiti, N. B. Chakrabati. Silicon Hetero-structure Devices for RF Wireless Communication, In Proceedings of 13th International Conference on VLSI Design (2005) 488-491
- [3] A. Schuppen, A. Gruhle, H. Kibbel, U. Konig. Mesa and planar SiGe HBTs on MBE wafers, Journal of materials science: materials in electronics 6 (1995) 298–30510.1007/BF00125884
- [4] J. W. Matthews, A. E. Blakeslee. Defects in epitaxial multilayers: III. Preparation of almost perfect multilayers, Journal of Crystal Growth 32 (1976) 265-273
- [5] H. Rücker, B. Heinemann, A. Fox. Half-terahertz SiGe BiCMOS technology, In IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (2012) 133–13610.1109/SiRF.2012.6160164
- [6] B. Heinemann, et al. SiGe HBT technology with fT/fMAX of 300/500 GHz and 2.0 ps CML gate delay, In IEEE 2010 International Electron Devices Meeting (2010) 688–691
- [7] P. Chevalier, T.F. Meister, B. Heinemann, et al. Towards THz SiGe HBTs, In IEEE Bipolar/BiCMOS Circuits and Technology Meeting (2011) 57-6510.1109/BCTM.2011.6082749
- [8] B. Heinemann, H. Rücker, R. Barth, et al. SiGe HBT with fT/fMAX of 505 GHz/720 GHz,” In IEEE International Electron Devices Meeting (2016) 311-31410.1109/IEDM.2016.7838335
- [9] S. M. Sze. Semiconductor Devices: Physics and Technology, 2nd Edition, USA, (1985)
- [10] Atlas user’s manual, https://dynamic.silvaco.com/dynamicweb/silen/, 2012 (Accessed 30 January 2012)
- [11] R. Stratton. Diffusion of hot and cold electrons in semiconductor barriers, Physical Review 126 (1962) 200210.1103/PhysRev.126.2002
- [12] R. Stratton. Semiconductor current-flow equations diffusion and degeneracy, IEEE Transaction on Electron Devices 19 (1972) 1288-129210.1109/T-ED.1972.17592
- [13] B. Meinerzhagen, K. Bach, I. Bozk, W. L. Eugl. A New Highly Efficient Nonlinear Relaxation Scheme for Hydrodynamic MOS Simulations, In: NUPAD IV. Workshop on Numerical Modeling of Processes and Devices for Integrated Circuits (1992) 91-9610.1109/NUPAD.1992.674086
- [14] Y. Apanovich, P. Blakey, R. Cottle, E. Lyumkis, B. Polsky, A. Shur, A. Tcherniaev. Numerical simulation of sub-micrometer devices including coupled nonlocal transport and non-isothermal effects, IEEE Transactions on Electron Devices 42 (1995) 890-89810.1109/16.381985
- [15] Y. Apanovich, E. Lyumkis, B. Polsky, A. Shur, P. Blakey. Steady-state and transiet analysis of submicron devices using energy balance and simplified hydrodynamic models, IEEE Transactions on Computer Aided Design of Integrated Circuits and Systems 13 (1994) 702-71110.1109/43.285243
- [16] Y. Shi, G. Niu. 2-D analysis of device parasitics for 800/1000 GHz fT/fMAX SiGe HBT, In Proc. of the Bipolar/BiCMOS Circuits and Technology Meeting (2005) 252–255
- [17] F. Schaeffler. High-mobility Si and Ge structures, Journal of semiconductor science and technology 12 (1997) 151510.1088/0268-1242/12/12/001
- [18] D. V. Lang, R. People, J. C. Bean, A. M. Sergent. Measurement of the band gap of GexSi1-x/Si strained layer hetero-structures, Applied Physics Letters 47 (1985) 1333
- [19] P. Ashburn. SiGe Hetero-junction Bipolar Transistors, John Wiley and sons, Chichetser, (2003)10.1002/047009074X