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Impact of lanthanum doped zirconium oxide (LaZrO2) gate dielectric material on FinFET inverter Cover

Impact of lanthanum doped zirconium oxide (LaZrO2) gate dielectric material on FinFET inverter

International Journal on Smart Sensing and Intelligent Systems
Volume 13 (2020): Issue 1 (January 2020)
By: Gurpurneet Kaur,  Sandeep Singh Gill and  Munish Rattan  
Open Access
|Nov 2020

Authors

Gurpurneet Kaur

gurpurneetkaur@gmail.com

I. K. Gujral Punjab Technical University, Punjab, India

Sandeep Singh Gill

National Institute of Technical Teachers Training and Research, Punjab, India

Munish Rattan

Guru Nanak Dev Engineering College, Punjab, India
DOI: https://doi.org/10.21307/ijssis-2020-032 | Journal eISSN: 1178-5608
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Language: English
Page range: 1 - 10
Submitted on: Sep 19, 2020
|
Published on: Nov 19, 2020
Published by: Professor Subhas Chandra Mukhopadhyay
In partnership with: Paradigm Publishing Services
Publication frequency: 1 issue per year
Keywords:
FinFET,
Inverter,
Dielectric,
Subthreshold swing,
Drain-induced barrier lowering,
Transconductance
Related subjects:
Engineering,
Introductions and overviews,
Engineering, other

© 2020 Gurpurneet Kaur, Sandeep Singh Gill, Munish Rattan, published by Professor Subhas Chandra Mukhopadhyay
This work is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 License.

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